TYPE | DESCRIPTION |
---|---|
Category | FETs, MOSFETs |
Manufacturer | GE Aerospace |
Series | SiC Power |
Product status | Active |
Packaging | Bulk |
Package / Case | Module |
Mounting Type | Chassis Mount |
Configuration | 2 N-Channel (Half Bridge) |
Operating Temperature | -55°C ~ 150°C (Tc) |
Technology | Silicon Carbide (SiC) |
Power - Max | 3.75kW (Tc) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
FET Feature | Silicon Carbide (SiC) |
Vgs(th) (Max) @ Id | 4.5V @ 480mA |
Supplier Device Package | Module |
ATTRIBUTE | DESCRIPTION |
---|---|
RoHS Status | RoHS non-compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | Reach not applicable |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
How to buy | Complete payment > Delivery |
---|---|
Delivery Time | 7-15 days |
Shipping tracking |
We will notify you by email with tracking number once order is shipped. You can also find the tracking number in order history. |
Returning/warranty | 90 Days Warranty; Anti-conterfeiting Policy |
Inventory data | 1,000,000 + |
Well-known brands | 1000 + |
QTY | UNIT PRICE | TOTAL PRICE |
---|---|---|
1 | $3231 | $3231 |
10 | $3043 | $30430 |
Minimum Order Quantity:1 |