JFETs - Electronic Components Distributor - Lansheng Technology Limited

Manufacturers

Panasonic Electronic Components

National Semiconductor

Renesas Electronics America Inc

Diodes Incorporated

Microchip Technology

Toshiba Semiconductor and Storage

Microsemi Corporation

Texas Instruments

Infineon Technologies

Central Semiconductor Corp

Nisshinbo Micro Devices Inc.

Rochester Electronics, LLC

Qorvo

NTE Electronics, Inc

Solid State Inc.

Linear Integrated Systems, Inc.

InterFET

NTE Electronics, Inc

Intersil

Precision Monolithics

Harris Corporation

Fairchild Semiconductor

NEC Corporation

Sanyo

Linear Technology

Advanced Micro Devices

Burr Brown

Motorola

Featured Products

1 / 268 page，total 3207 results Previous | Next

Part Number	Manufacturer	Description	In stock	Quantity	Package	Status	Detail
MMBF4416A	onsemi	JFET N-CH 35V 15MA SOT23	69000	RFQ	Tape & Reel (TR)	Active	Detail
MMBF4393LT1G	onsemi	JFET N-CH 30V SOT23-3	35500	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ113	onsemi	JFET N-CH 35V SOT23-3	6000	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ177LT1G	onsemi	JFET P-CH 30V SOT23-3	3000	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ175LT1G	onsemi	JFET P-CH 30V SOT23-3	48000	RFQ	Tape & Reel (TR)	Active	Detail
MMBFU310LT1G	onsemi	JFET N-CH 25V SOT23-3	12000	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ111	onsemi	JFET N-CH 35V SOT23-3	21000	RFQ	Tape & Reel (TR)	Active	Detail
2SK209-BL(TE85L,F)	Toshiba Semiconductor and Storage	JFET N-CH 50V 14MA SC59	93000	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ270	onsemi	JFET P-CH 30V SOT23-3	6000	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ176	onsemi	JFET P-CH 30V SOT23-3	28990	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ201	onsemi	JFET N-CH 40V SOT23-3	15623	RFQ	Tape & Reel (TR)	Active	Detail
MMBFJ108	onsemi	JFET N-CH 25V SOT23-3	18000	RFQ	Tape & Reel (TR)	Active	Detail

1 / 268 page，total 3207 results

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.