Infineon launches new discrete 650V TRENCHSTOP™ IGBT7 H7 for high-efficiency power supply applications

Industry News 2023-11-22

【Lansheng Technology News】Infineon Technologieslaunches new discrete 650V IGBT7 H7 product, further expanding its TRENCHSTOP™ IGBT7 product lineup. The new device features a new generation of emitter-controlled EC7 freewheeling diodes to meet the growing demand for environmentally friendly and efficient power solutions.


TRENCHSTOP™ IGBT7 H7 adopts the latest micro-trench gate technology, which has excellent control and performance, can significantly reduce losses, improve efficiency and power density. The semiconductor device is therefore suitable for use in a variety of applications such as string inverters, energy storage systems, electric vehicle charging applications, as well as traditional applications such as industrial UPS and welding.


In a discrete package, theInfineon650 V TRENCHSTOP™ IGBT7 H7 delivers up to 150A. The product series has current ratings from 40A to 150A and is available in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus.


The TO-247-3 HCC package of TRENCHSTOP™ IGBT7 H7 has high creepage distance. The 4-pin package of TO-247 (Standard package: IKZA, Plus package: IKY) excels in improving performance as it not only reduces switching losses but also provides additional advantages such as lower voltage overshoot, minimal conduction loss and lowest reverse recovery loss. With these features, TRENCHSTOP™ IGBT7 H7 simplifies design and minimizes the need for parallel devices.


In addition, the 650 V TRENCHSTOP™ IGBT7 H7 offers excellent moisture resistance for reliable operation in harsh environments. The device has passed the relevant tests of JEDEC 47/20/22, especially HV-H3TRB, and complies with industrial application standards, making it ideal for outdoor applications. IGBT is specially designed to meet the needs of environmentally friendly and efficient energy applications, and is a significant improvement over previous generations of products. TRENCHSTOP™ IGBT7 H7 is therefore an ideal complement to the NPC1 topology commonly used in solar and energy storage systems etc.


Disclaimer: The opinions, beliefs, and viewpoints expressed by the various authors and/or forum participants on this website do not necessarily reflect the opinions, beliefs, and viewpoints of Lansheng Technology Limited or official policies of Lansheng Technology Limited.

Previous: STMicroelectronics launches high-precision medium-voltage operational amplifier

Next: Micron is the first to provide industry partners with high-speed, low-latency 128GB large-capacity RDIMM memory based on 32Gb single-die DRAM