Nexperia’s first SiC MOSFET raises safety, robustness and reliability standards for industrial power switching applications

【Lansheng Technology News】November 30, 2023:Nexperiatoday announced the launch of its first silicon carbide (SiC) MOSFET and released two 1200 V discrete devices in 3-pin TO-247 packages with RDS(on) of 40 mΩ and 80 mΩ respectively. NSF040120L3A0 and NSF080120L3A0 are the first products released in Nexperia's SiC MOSFET product portfolio. Subsequently, Nexperia will continue to expand the product lineup, launching a variety of devices with different RDS(on), and providing through-hole packaging and surface mount packaging options. The two devices launched this time have high availability and can meet the demand for high-performance SiC MOSFETs in automotive and industrial applications such as electric vehicle (EV) charging piles, uninterruptible power supplies (UPS), and solar and energy storage system (ESS) inverters.

RDS(on) affects conduction power loss and is a key performance parameter for SiC MOSFETs. Nexperia found that this is also a factor that limits the performance of many SiC devices currently on the market. The newly launched SiC MOSFET adopts innovative process technology to achieve industry-leading temperature stability, within the operating temperature range of 25°C to 175°C. , the nominal value of RDS(on) only increases by 38%.

NexperiaSiC MOSFETs have very low total gate charge (QG), resulting in lower gate drive losses. In addition, Nexperia balances the gate charge so that the ratio of QGD to QGS is very low. This feature further improves the device's immunity to parasitic turn-on.

In addition to the positive temperature coefficient, Nexperia's SiC MOSFETs also have ultra-low device-to-device threshold voltage VGS(th), which enables very balanced current-carrying performance under both static and dynamic conditions when the devices are operated in parallel. In addition, lower body diode forward voltage (VSD) helps improve device robustness and efficiency while relaxing dead time requirements for asynchronous rectification and freewheeling operations.

Nexperia also plans to launch automotive-grade MOSFETs in the future. NSF040120L3A0 and NSF080120L3A0 are now in mass production. Please contact a Nexperia sales representative for full SiC MOSFET samples.