【Lansheng Technology News】Mitsubishi Electric Corporation announced today that it will establish a strategic partnership with Nexperia B.V. to jointly develop silicon carbide (SiC) power semiconductors for the power electronics market. Mitsubishi Electric will develop and supply SiC MOSFET chips using its wide-bandgap semiconductor technology, and Nexperia will use these chips to develop SiC discrete devices.
The electric vehicle market is expanding globally and is helping to drive exponential growth in SiC power semiconductors, which offer lower energy losses, higher operating temperatures and faster switching speeds than traditional silicon power semiconductors. The high efficiency of SiC power semiconductors is expected to make a significant contribution to global decarbonization and green transformation.
Mitsubishi Electric has established leading positions in areas such as high-speed trains, high-voltage industrial applications and home appliances. In 2010, the company launched the world's first SiC power module for air conditioning, and in 2015 became the first supplier of all-SiC power modules for Shinkansen bullet trains. Mitsubishi Electric has accumulated outstanding expertise in developing and manufacturing SiC power modules, which are known for their advanced performance and high reliability.
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