【Lansheng Technology News】Infineon Technologies AGrecently announced the addition of new industry-standard packaging products to its CoolSiC 1200 V and 2000 V MOSFET module series. It uses a mature 62 mm device half-bridge topology design and is based on the newly launched enhancement-mode M1H silicon carbide (SiC) MOSFET technology. This package enables SiC to be used in mid-power applications above 250 kW, where the power density of traditional IGBT silicon technology has reached its limit. Compared with traditional 62mm IGBT modules, its application scope has now expanded to solar energy, servers, energy storage, electric vehicle charging piles, traction, commercial induction cookers and power conversion systems.
Enhanced M1H technology can significantly widen the gate voltage window, even at high switching frequencies, without any restrictions, ensuring high gate reliability against induced voltage spikes caused by drivers and layout. Additionally, extremely low switching and transmission losses minimize cooling requirements. Combined with high reverse voltage, these semiconductor devices also meet another requirement of modern system design. WithInfineon'sCoolSiCTM chip technology, the converter design can become more efficient and the power rating of a single inverter can be further increased, thereby reducing the overall system cost.
Featuring a copper base plate and threaded interface, the package features a highly robust mechanical design that increases system availability, lowers service costs and reduces downtime costs. Excellent reliability is achieved through strong thermal cycling capabilities and a continuous operating junction temperature (Tvjop) of 150°C. Its symmetrical internal package design enables the upper and lower switches to have the same switching conditions. Optional pre-applied thermal interface material (TIM) is available to further enhance the module’s thermal performance.
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